标题： 具有共振负U中心掺杂的半导体中的超导性 显示英文标题

标题： Superconductivity in a semiconductor doped with the resonance negative U-centers

摘要： 我们研究了用共振负U中心掺杂半导体对其超导转变温度的影响。U中心处电子的吸引导致转变温度升高。相反，导带电子在U中心的共振散射及其与之的混合效应则会降低转变温度。如果共振宽度接近于U中心能级的能量，则对超导转变温度的影响最大。在U中心浓度足够低且缺乏电子-声子耦合的情况下，尽管U中心处电子间存在吸引力，超导转变仍然完全不存在。 显示英文摘要

摘要： We study the effect of doping the semiconductor with the resonance negative U-centers upon its superconducting transition temperature. The attraction of electrons at the U-centers leads to the enhancement of transition temperature. On the contrary, the resonant scattering of conduction electrons along with their hybridization at the U-centers results in reducing the transition temperature. The largest effect on the superconducting transition temperature takes place if the resonance width is of the order of the energy level at the U-center. In the lack of the electron-phonon coupling under sufficiently low concentration of U-centers the superconducting transition is entirely absent in spite of the presence of attraction between electrons at U-centers.