标题： 利用一阶反转曲线测量区分反常和拓扑霍尔效应 显示英文标题

标题： Differentiating anomalous and topological Hall effects using first-order reversal curve measurements

摘要： 下一代磁性存储器依赖于新型磁相进行信息存储。诸如斯格明子之类的新型自旋结构由于其拓扑保护性和通过电场控制的可操作性，提供了一种可能的方向。然而，这些自旋结构的共同特征——拓扑霍尔效应（THE），可以被其他琐碎效应模仿。竞争性的反常霍尔效应（AHE）分量可以在霍尔电压中产生一个峰值，类似于THE，使得THE的明确识别变得困难。通过将一阶反转曲线（FORC）技术应用于候选拓扑霍尔系统的霍尔效应中，我们可以清楚地区分THE和AHE。该技术允许对具有拓扑非平凡自旋结构的磁性材料和异质结构中的THE和AHE进行定量研究。我们演示了该技术，并将其应用于几个实例。 显示英文摘要

摘要： Next generation magnetic memories rely on novel magnetic phases for information storage. Novel spin textures such as skyrmions provide one possible avenue forward due to their topological protection and controllability via electric fields. However, the common signature of these spin textures, the topological Hall effect (THE), can be mimicked by other trivial effects. Competing anomalous Hall effect (AHE) components can produce a peak in the Hall voltage similar to that of the THE, making clear identification of the THE difficult. By applying the first-order reversal curve (FORC) technique to the Hall effect in candidate topological Hall systems we can clearly distinguish between the THE and AHE. This technique allows for quantitative investigation of the THE and AHE in magnetic materials and heterostructures with topologically non-trivial spin textures. We demonstrate the technique and apply it to several examples.