标题： 室温下15-13-15椅型石墨烯纳米带异质结构中的泡利自旋阻塞和电流整流 显示英文标题

标题： Room-Temperature Pauli Spin Blockade and Current Rectification in 15-13-15 Armchair Graphene Nanoribbon Heterostructures

摘要： 在本研究中，我们使用紧束缚模型研究了13-11-13和15-13-15椅型石墨烯纳米带（AGNR）超晶格（SLs）的电子结构。我们证明，15-13-15 AGNR SLs的导带和价带子带可以通过Su-Schrieffer-Heeger模型准确描述，在15-AGNR和13-AGNR段之间的连接处出现拓扑保护的界面态。这些界面态使得量子点阵列的能级与体态能级分离良好，使其成为高温固态量子处理器的有前途的候选材料。对于15-13-15 AGNRH段，我们在纵向电场下观察到局域的锯齿形边缘态和拓扑保护的界面态，后者提供了高效的隧穿通道，相比之下，边缘态的导电性较差。我们进一步研究了在Pauli自旋阻塞下通过这些界面态的非线性电荷输运，结果表明隧穿电流光谱揭示了电荷稳定性图和库仑阻塞振荡，与其它串联双量子点系统的实验结果一致。此外，我们研究了轨道偏移对隧穿电流整流的影响，并证明当能级展宽优化时，在广泛的温度范围内实现了显著的电流整流。这些结果突显了15-13-15 AGNRH在鲁棒自旋电流转换和量子器件应用中的潜力，由于通过自下而上合成技术可以精确调节关键参数，并且双栅电极集成简便，因此相较于其他提出的结构具有优势。 显示英文摘要

摘要： In this study, we investigate the electronic structures of 13-11-13 and 15-13-15 armchair graphene nanoribbon (AGNR) superlattices (SLs) using a tight-binding model. We demonstrate that the conduction and valence subbands of 15-13-15 AGNR SLs can be accurately described by the Su-Schrieffer-Heeger model, with topologically protected interface states emerging at the junctions between 15-AGNR and 13-AGNR segments. These interface states enable the formation of quantum dot arrays with energy levels well separated from bulk states, making them promising candidates for high-temperature solid-state quantum processors. For 15-13-15 AGNRH segments, we observe both localized zigzag edge states and topologically protected interface states under longitudinal electric fields, with the latter providing efficient tunneling channels in contrast to the less conductive edge states. We further explore nonlinear charge transport through these interface states under Pauli spin blockade, showing that tunneling current spectra reveal charge stability diagrams and Coulomb blockade oscillations, consistent with experimental findings in other serial double quantum dot systems. Additionally, we examine the impact of orbital offsets on tunneling current rectification and demonstrate that significant current rectification is achieved over a wide temperature range when level broadening is optimized. These results highlight the potential of 15-13-15 AGNRHs for robust spin-current conversion and applications in quantum devices, offering advantages over other proposed structures due to precise tunability of key parameters via bottom-up synthesis techniques and the ease of two-gate electrode integration.