标题： 远莫尔条纹和近莫尔条纹菱形五层石墨烯中的可调谐陈绝缘体 显示英文标题

标题： Tunable Chern Insulators in Moiré-Distant and Moiré-Proximal Rhombohedral Pentalayer Graphene

摘要： 菱方堆叠的多层石墨烯与六方氮化硼对齐已成为研究由电子关联和拓扑相互作用引起的奇异量子态的一个极佳平台。 在这里，我们报告了一种菱方五层石墨烯/六方氮化硼摩尔超晶格器件的电输运性质，该器件的扭转角为 1.02{\deg }，摩尔周期约为 10.1 纳米。 在这个器件中，我们在摩尔近端和摩尔远端区域都观察到了反常霍尔效应和整数量子霍尔绝缘体。 具体来说，在摩尔远端区域，在适度磁场下，当摩尔填充数{\nu }= 1 时出现了一个 Chern 数 C = 1 的整数量子霍尔绝缘体。 在摩尔近端区域，我们在{\nu }= 1 附近识别出了一系列丰富的拓扑和关联相，包括 Chern 数 C = \pm 1 的整数量子霍尔绝缘体状态和平凡绝缘体，并且它们对施加的位移场和磁场都非常敏感。 此外，在摩尔近端区域的{\nu }= 2 时，还观察到 Chern 数 C = \pm 1 的霍尔绝缘体。 我们的结果强调了拓扑量子态对摩尔势垒强度的敏感性，并突显了扭转角工程在探索菱方堆叠多层石墨烯摩尔系统中的新型量子态的重要性。 显示英文摘要

摘要： Rhombohedral-stacked multilayer graphene aligned with hexagonal boron nitride has emerged as an excellent platform for investigating exotic quantum states arising from the interplay between electron correlations and topology. Here, we report the electrical transport properties of a rhombohedral pentalayer graphene/hexagonal boron nitride moir\'e device with a twist angle of 1.02{\deg} and a moir\'e period of approximately 10.1 nm. In this device, we observe anomalous Hall effects and integer Chern insulators in both moir\'e-proximal and moir\'e-distant regimes. Specifically, in the moir\'e-distant regime, an integer Chern insulator with Chern number C = 1 emerges at moir\'e filling {\nu} = 1 under a moderate magnetic field. In the moir\'e-proximal regime, we identify a rich set of topological and correlated phases near {\nu} = 1, including integer Chern insulator states with C = \pm 1 and trivial insulators, and they are highly sensitive to both the applied displacement field and magnetic field. Moreover, at {\nu} = 2 in the moir\'e-proximal regime, Chern insulators with C = \pm 1 has also been observed. Our results underscore the sensitivity of topological quantum states to the moir\'e potential strength and highlight the importance of twist-angle engineering in exploring novel quantum states in rhombohedral-stacked multilayer graphene moir\'e systems.