标题： 具有高Chern数的量子反常霍尔态在Haldane-石墨烯多层结构中 显示英文标题

标题： High Chern Number Quantum Anomalous Hall States in Haldane-Graphene Multilayers

摘要： 量子异常霍尔（QAH）系统具有高陈数（$|C|>1$）的情况很少见。 本文介绍了一种Haldane石墨烯多层异质结构，该结构承载具有任意陈数的QAH态。 在rhombohedral堆叠的石墨烯$N$层中，低能有效哈密顿量的Dirac点在$K_{\pm}$处变为$N^\text{th}$阶零点。 当额外一层Haldane模型堆叠在多层之上时，高阶Dirac点被打开能隙，异质结构进入具有$|C|=N+1$的QAH相。 因此，打开高阶Dirac点的能隙为高陈数QAH态开辟了新的途径。 显示英文摘要

摘要： Quantum anomalous Hall (QAH) systems with high Chern number ($|C|>1$) are rare. This Letter introduces a Haldane-graphene multilayer heterostructure hosting QAH states with arbitrary Chern number. In a rhombohedral-stacked graphene $N$-layer, the Dirac points at $K_{\pm}$ become $N^\text{th}$-order zeros of the low-energy effective Hamiltonian. When an extra layer of Haldane model is stacked on top of the multilayer, the high-order Dirac points are gapped out and the heterostructure enters QAH phases with $|C|=N+1$. Therefore, gapping out high-order Dirac points paves a new way to high Chern number QAH states.