标题： 在高迁移率 Al0.8Ga0.2Sb/InAs/Al0.8Ga0.2Sb 量子阱异质结构中具有大自旋分裂的休布尼科夫-德哈斯量子振荡 显示英文标题

标题： Shubnikov-de Haas quantum oscillations with large spin splitting in highmobility Al0.8Ga0.2Sb/InAs/ Al0.8Ga0.2Sb quantum-well heterostructures

摘要： 我们报道了高质量Al0.8Ga0.2Sb-InAs-Al0.8Ga0.2Sb量子阱薄膜的外延生长，这些薄膜的特点是高载流子迁移率和强自旋-轨道耦合。 通过适当地优化AlGaSb势垒层中的Al与Ga的比例，异质结构的量子限制显著增强，这导致在低温下电子迁移率高达924000 cm2/Vs，磁电阻比达到365000。 同时，明显的Shubnikov-de Haas量子振荡持续到30K，它们的单一频率特征表明二维电子气通道中费米面定义明确，没有子带混合。 此外，12.93的有效g因子导致在大磁场下观察到Zeeman分裂。 我们的结果验证了AlGaSb/InAs量子阱异质结构作为构建高效能拓扑自旋电子器件的合适候选材料。 显示英文摘要

摘要： We report the epitaxial growth of high-quality Al0.8Ga0.2Sb-InAs-Al0.8Ga0.2Sb quantum well films featured by high carrier mobility and strong spin-orbit coupling. By appropriately optimizing the Al-to-Ga ratio in the AlGaSb barrier layer, the quantum confinement of the heterostructure is significantlyenhanced, which results in both an ultra-high electron mobility of 924000 cm2/Vs and a giant magnetoresistance ratio of 365000 at low temperatures. Meanwhile, pronounced Shubnikov-deHaas quantum oscillations persist up to 30 K, and their single-frequency feature indicates a well defined Fermi surface without subband mixing in the two-dimensional electron gas channel. Moreover, the large effective g-factor of 12.93 leads to the observation of Zeeman splitting at large magnetic fields. Our results validate the AlGaSb/InAs quantum well heterostructures as a suitable candidate for constructing energy-efficient topological spintronic devices.