标题： 反演对称性破缺拓扑绝缘体薄膜中电流诱导自旋极化增强 显示英文标题

标题： Promoted current-induced spin polarization in inversion symmetry broken topological insulator thin films

摘要： 我们理论上研究了在施加的面内电场作用下，具有破缺反演对称性的无序拓扑绝缘体薄膜中的电流诱导自旋极化。 利用自洽Born近似下的Kubo公式，并结合顶点修正来考虑多次散射事件，我们分析了无序、化学势、上下表面之间的静电势差以及动量相关的杂化如何影响自旋磁化率。 我们的结果显示，自旋磁化率在一个零能隙附近的有限范围内表现出非零值，且随着化学势的增加，该范围会扩大。 较高的杂化强度会在自旋响应中引入不对称性，而更强的势差，打破反演对称性，显著增强极化，这一趋势归因于带隙反转，并通过顶点修正进一步细化。 这些发现为调节拓扑薄膜中的自旋-电荷转换提供了理论框架，并对自旋电子器件应用具有重要意义。 显示英文摘要

摘要： We theoretically investigate current-induced spin polarization in disordered topological insulator thin films with broken inversion symmetry under an applied in-plane electric field. Utilizing the Kubo formalism within the self-consistent Born approximation, and incorporating vertex corrections to account for multiple scattering events, we analyze how disorder, chemical potential, the electrostatic potential difference between the top and bottom surfaces, and momentum-dependent hybridization affect the spin susceptibility. Our results reveal that the spin susceptibility exhibits nonzero values within a finite range around a zero gap, and this range broadens as the chemical potential increases. A higher hybridization strength induces asymmetry in the spin response, and a stronger potential difference, breaking inversion symmetry, significantly enhances polarization, a trend attributable to band inversion that is further refined by vertex corrections. These findings provide a theoretical framework for tuning spin-charge conversion in topological thin films, with implications for spintronic device applications.