标题： GaAs衬底上的电信量子点作为可集成的高性能单光子源 显示英文标题

标题： Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources

摘要： 在电信波段发射的确定性单光子源的发展是量子通信和光子量子计算的关键挑战。 在这里，我们研究了通过分子束外延生长的半导体量子点在电信O波段和C波段的光学性质和单光子发射特性。 这些量子点嵌入在一个固定铟含量的InGaAs基质中，并生长在一个成分渐变的InGaAs缓冲层之上。 这种结构允许未来实现电接触纳米腔，以实现高质量和明亮的QD发射。 在详细的光学表征中，我们观察到线宽低至$ 50 \mu$eV，接近光谱仪的分辨率极限，精细结构分裂值接近$ 10 \mu$eV，并且$g^{(2)} (0)$值低至$0.08$。 这些结果提升了当前在GaAs衬底上通过MBE生长的在电信波段发射的量子点的性能指标，并展示了所展示的异质结构在进一步整合到光子器件中的潜力。 显示英文摘要

摘要： The development of deterministic single photon sources emitting in the telecommunication bands is a key challenge for quantum communication and photonic quantum computing. Here, we investigate the optical properties and single-photon emission of molecular beam epitaxy grown semiconductor quantum dots emitting in the telecom O- and C- bands. The quantum dots are embedded in a InGaAs matrix with fixed indium content grown on top of a compositionally graded InGaAs buffer. This structure allows for the future implementation of electrically contacted nanocavities to enable high-quality and bright QD emission. In detailed optical characterizations we observe linewidths as low as $ 50 \mu$eV, close to the spectrometer resolution limit, low fine structure splittings close to $ 10 \mu$eV, and $g^{(2)} (0)$ values as low as $0.08$. These results advance the current performance metrics for MBE-grown quantum dots on GaAs substrates emitting in the telecom bands and showcase the potential of the presented heterostructures for further integration into photonic devices.