标题： X射线辐照研究150$\,$nm 和 180$\,$nm 的单片Monopix DMAPS传感器 显示英文标题

标题： X-ray Irradiation Studies on the Monopix DMAPS in 150$\,$nm and 180$\,$nm

摘要： 带有耗尽衬底的单片主动像素传感器为高辐射环境中的像素探测器提供了一种有前景的选择。高电阻率硅衬底和商用CMOS技术中的高偏置电压能力促进了电荷敏感体积的耗尽。TJ-Monopix2 和 LF-Monopix2 是其各自开发线中最新型的大规模芯片，旨在满足 ATLAS 内部跟踪器外层的要求。这些要求包括对电离辐射的耐受性高达 100$\,$Mrad。通过用 X 射线照射这两种设备至相应的电离剂量来评估它们，结果显示在 100$\,$Mrad 下性能没有显著退化，并且在整个辐照过程中能够持续运行。 显示英文摘要

摘要： Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies facilitate depletion of the charge sensitive volume. TJ-Monopix2 and LF-Monopix2 are the most recent large-scale chips in their respective development line, aiming for the ATLAS Inner Tracker outer layer requirements. Those include a tolerance to ionizing radiation of up to 100$\,$Mrad. It was evaluated by irradiating both devices with X-rays to the corresponding ionization dose, showing no significant degradation of the performance at 100$\,$Mrad and continuous operability throughout the irradiation campaign.