标题： 栅极电压控制的磁各向异性效应在Pt-卟啉功能化的单层石墨烯上 显示英文标题

标题： Gate Voltage-Controlled Magnetic Anisotropy Effect on Pt-Porphyrin functionalized single-layer graphene

摘要： 我们报告了一种新颖的方法，通过使用铂(II) 5,10,15,20-四苯基卟啉 (Pt-porphyrin) 的非共价功能化，在单层石墨烯 (SLG) 和 NiFe (Py) 界面实现大电压控制磁各向异性 (VCMA) 和增强的自旋轨道耦合 (SOC)。 利用化学气相沉积 (CVD) 生长的 SLG，我们证明 Pt-porphyrin 功能化显著增加了 SOC，并通过自旋转移铁磁共振 (ST-FMR) 测量证实了界面磁各向异性的强电压调制。 实现了 375.6 (fJ/(V-m)) 的显著 VCMA 系数，与原始 SLG 相比，自旋扭矩效率 ({\theta }sh) 提高了一个数量级。 在施加栅极电压下，共振场表现出明显的可逆偏移，证实了界面磁各向异性的强电场调制。 拉曼光谱和 X 射线光电子能谱 (XPS) 确认了功能化界面的结构完整性和有效的电荷转移。 背栅 graphene 场效应晶体管 (GFETs) 的电学表征进一步揭示了功能化后的可调电子特性。 我们的结果确立了功能化石墨烯/铁磁体界面作为低功耗、电压控制自旋电子器件的有前途的平台，为可扩展、节能的记忆和逻辑技术铺平了道路。 显示英文摘要

摘要： We report a novel approach to engineering large voltage-controlled magnetic anisotropy (VCMA) and enhanced spin-orbit coupling (SOC) at the interface of single-layer graphene (SLG) and NiFe (Py) through non-covalent functionalization with Platinum (II) 5,10,15,20-tetraphenyl porphyrin (Pt-porphyrin). Using chemical vapor deposition (CVD)-grown SLG, we demonstrate that Pt-porphyrin functionalization significantly increases the SOC and enables robust voltage modulation of interfacial magnetic anisotropy, as confirmed by spin-torque ferromagnetic resonance (ST-FMR) measurements. A substantial VCMA coefficient of 375.6 (fJ/(V-m)) is achieved, accompanied by an order-of-magnitude enhancement in spin torque efficiency ({\theta}sh) compared to pristine SLG. The resonance field exhibits a clear, reversible shift under applied gate voltage, confirming robust electric-field modulation of interfacial magnetic anisotropy. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) confirm the structural integrity and effective charge transfer at the functionalized interface. Electrical characterization of back-gated graphene field-effect transistors (GFETs) further reveals tunable electronic properties upon functionalization. Our results establish functionalized graphene/ferromagnet interfaces as a promising platform for low-power, voltage-controlled spintronic devices, paving the way for scalable, energy-efficient memory and logic technologies