标题： OpenGCRAM：一个开源增益单元编译器，支持人工智能工作负载的设计空间探索 显示英文标题

标题： OpenGCRAM: An Open-Source Gain Cell Compiler Enabling Design-Space Exploration for AI Workloads

摘要： 增益单元存储器（GCRAM）比SRAM具有更高的密度和更低的功耗，使其成为领域专用加速器片上存储器的有前途的候选者。 为了支持具有不同流量和寿命指标的工作负载， GCRAM还提供高带宽、超低漏电功耗和广泛的保持时间，这些可以通过晶体管设计（如阈值电压和沟道材料）进行调整，并通过改变工作电压实时调整。 然而，设计和优化GCRAM子系统可能耗时。 在本文中，我们提出了OpenGCRAM，一个开源的GCRAM编译器，能够为商用代工厂CMOS生成GCRAM存储体电路设计和DRC-和LVS清洁的版图，同时根据用户指定的配置（例如，字长和字数）提供面积、延迟和功耗仿真。 OpenGCRAM实现了快速、准确、可定制和优化的GCRAM模块生成，减少了设计时间，确保工艺合规性，并提供满足各种应用需求的性能定制的存储模块。 显示英文摘要

摘要： Gain Cell memory (GCRAM) offers higher density and lower power than SRAM, making it a promising candidate for on-chip memory in domain-specific accelerators. To support workloads with varying traffic and lifetime metrics, GCRAM also offers high bandwidth, ultra low leakage power and a wide range of retention times, which can be adjusted through transistor design (like threshold voltage and channel material) and on-the-fly by changing the operating voltage. However, designing and optimizing GCRAM sub-systems can be time-consuming. In this paper, we present OpenGCRAM, an open-source GCRAM compiler capable of generating GCRAM bank circuit designs and DRC- and LVS-clean layouts for commercially available foundry CMOS, while also providing area, delay, and power simulations based on user-specified configurations (e.g., word size and number of words). OpenGCRAM enables fast, accurate, customizable, and optimized GCRAM block generation, reduces design time, ensure process compliance, and delivers performance-tailored memory blocks that meet diverse application requirements.