标题： 基于TCAD和实验数据的GaN HEMTs射频应用中的迁移率提取与分析 显示英文标题

标题： Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data

摘要： 本文介绍了使用TCAD仿真和实验表征对GaN高电子迁移率晶体管(HEMTs)的分析。利用Nextnano仿真软件研究了能带结构，以观察平衡条件下二维电子气(2DEG)的形成和载流子限制。此外，对制造的科研级GaN HEMTs的I-V和C-V数据进行了分析，以提取关键电气参数。该器件表现出1.9 mA的导通电流和0.01 mA的关断电流，表明具有很强的导通/关断电流比。观察到亚阈值摆幅为80 mV/十倍频程，DIBL为5 mV/V，证实了良好的栅极控制和短沟道抑制。导通电阻为22.72欧姆每微米，饱和电压为1 V。峰值跨导在线性区域提取为0.18 mS，在饱和区域为0.5 mS。通过跨导方法计算了场效应迁移率，在低漏极偏压下最大值约为1200 cm2/V.s。结合仿真和实验的方法提供了对GaN HEMT行为的全面见解，有助于深入理解结构-性能关系，这对先进晶体管设计至关重要。 显示英文摘要

摘要： This paper presents an analysis of GaN high-electron-mobility transistors (HEMTs) using both TCAD simulation and experimental characterization. The energy band structure was studied using Nextnano simulation software to observe two-dimensional electron gas (2DEG) formation and carrier confinement under equilibrium conditions. Additionally, I-V and C-V data from fabricated research-grade GaN HEMTs were analyzed to extract key electrical parameters. The device demonstrated an ON current of 1.9 mA and an OFF current of 0.01 mA, indicating a strong ON/OFF current ratio. A subthreshold swing of 80 mV/decade and a DIBL of 5 mV/V were observed, confirming good gate control and short-channel suppression. The ON-resistance was 22.72 ohm per micron, with a saturation voltage of 1 V . The peak transconductance was extracted as 0.18 mS in the linear region and 0.5 mS in saturation. Field-effect mobility was calculated using the transconductance method, with a maximum value of approximately 1200 cm2/V.s at low drain bias. The combined simulation and experimental approach provided comprehensive insight into GaN HEMT behavior, enabling a deeper understanding of structure-performance relationships critical to advanced transistor design.