标题： 耦合AlGaN/GaN量子阱中显著的迁移率增强，考虑井间距离和不对称宽度 显示英文标题

标题： Significant Mobility Enhancement in Coupled AlGaN/GaN Quantum Wells considering Inter-Well Distance and Asymmetric Widths

摘要： 我们证明，具有不对称宽度的耦合AlGaN/GaN量子阱（$L_1-L_2<30 $ A）在最佳分离距离（d = 100 A）时，迁移率比单个阱高达4.5倍。 关键的是，当d>40 A时，迁移率超过单个阱，逆转了在较小距离下的趋势。 这种增强源于双层屏蔽，抑制了远程/背景杂质和位错，而LO声子散射则不受影响。 对于相同的阱，耦合系统在d<40 A时表现不如单个阱，但在此阈值以上则优于单个阱。 峰值增益出现在低温（77 K）。 我们的结果提供了一个稳健的理论框架，以优化AlGaN/GaN异质结构中的迁移率，在量子器件工程中减少实验性的试错过程。 显示英文摘要

摘要： We demonstrate that coupled AlGaN/GaN quantum wells with asymmetric widths ($L_1-L_2<30 $ A achieve up to 4.5 times higher mobility than single wells at optimal separation (d = 100 A). Crucially, mobility surpasses single wells when d>40 A reversing the trend at smaller distances. This enhancement stems from double-layer screening that suppresses remote/background impurities and dislocations, while LO phonon scattering remains unaffected. For identical wells, coupled systems underperform single wells at d<40 A but exceed them beyond this threshold. Peak gains occur at cryogenic temperatures (77 K). Our results provide a robust theoretical framework to optimize mobility in AlGaN/GaN heterostructures, reducing experimental trial-and-error in quantum device engineering.