标题： 飞秒激光对直接和间接带隙半导体表面结构的特征 显示英文标题

标题： Features of Surface Structuring of Direct and Indirect Band Gap Semiconductors by Femtosecond Laser

摘要： 飞秒（fs）激光辐射对具有直接带隙（ZnSe、GaAs、CdZnTe）的半导体，具有结构诱导的直接到间接带隙转变（PbI2、GaSe）和间接带隙（Si）的影响已经进行了研究。 在空气环境中，通过多脉冲模式对半导体进行飞秒激光处理。 通过扫描电子显微镜（SEM）和SEM图像的二维傅里叶变换、光学光致发光光谱分析了飞秒激光辐射参数对半导体表面形貌的影响。 在使用基频飞秒激光辐射（800 nm，约130-150 fs）处理下，观察到了低空间频率LIPSS和高空间频率LIPSS。 两种类型的LIPSS（低空间频率LIPSS和高空间频率LIPSS）以及其他结构特征（沟槽、晶粒、周期性结构中的不同缺陷，即环、条带断裂和烧蚀产物）的具体特征也进行了分析。 LIPSS的形成机制也在电磁方法和物质重排过程的范围内进行了考虑。 显示英文摘要

摘要： The impact of femtosecond (fs) laser radiation on semiconductors with direct (ZnSe, GaAs, CdZnTe) band gap, with the structurally induced direct-to-indirect band gap transition (PbI2, GaSe) and indirect band gap (Si) has been studied. The fs-laser treatment of semiconductors has been performed in the multi-pulse regime in air environment. The influence of fs-laser radiation parameters on surface morphology of the semiconductors has been analysed by scanning electron microscopy (SEM) and 2D Fourier transform of SEM images, optical photoluminescence spectroscopy. Under the treatment with the fundamental fs-laser radiation (800 nm, about 130-150 fs) both low spatial frequency LIPSS and high spatial frequency LIPSS have been observed. Specific features of LIPSS of two types (low spatial frequency LIPSS and high spatial frequency LIPSS) and other structure peculiarities (grooves, grains, different defects in periodic structure, i.e. loops, strip breaks, and ablation products) have been also analysed. The formation mechanisms of LIPSS are also considered within the scope of two approaches,namely an electromagnetic approach and matter reorganization processes.