标题： 室温下合成反铁磁自旋阀中自旋霍尔纳米振荡器动力学的巨磁电阻检测 显示英文标题

标题： Room temperature giant magnetoresistance detection of spin hall nano-oscillator dynamics in synthetic antiferromagnetic Spin-Valve

摘要： 传统自旋霍尔纳米振荡器（SHNOs）由于铁磁层的低各向异性磁阻（AMR < 0.3%）而面临基本的功率限制。为解决这一问题，我们开发了一种合成反铁磁自旋阀（SAF-SV）异质结构[Ta/NiFe/Ru/NiFe/Cu/NiFe/Hf/Pt]，该结构能够在室温下实现基于巨磁阻（GMR）的SHNO动态检测。NiFe/Ru/NiFe SAF参考层在自旋翻转状态下通过Cu间隔层与NiFe自由层耦合，实现了显著的GMR比率为0.568% - 表现出对磁场/电流方向的完全独立性。自旋转移力矩铁磁共振（ST-FMR）验证了通过Pt重金属层的直流电流可以有效调节自由层的铁磁共振线宽，同时保持与SAF层的解耦动力学。通过高热导率的SiC衬底和AlN覆盖层进行热管理，成功缓解了电流分流引起的焦耳加热。值得注意的是，在0.82 mA偏置电流下观察到稳定的自振荡峰，振荡频率可通过外部磁场调节，并在低磁场下表现出潜在的双模行为。这项工作为室温、高功率自旋电子振荡器建立了一个新范式，为神经形态计算和相干射频通信应用提供了重要的潜力。 显示英文摘要

摘要： Conventional spin Hall nano-oscillators (SHNOs) face fundamental power limitations due to the low anisotropic magnetoresistance (AMR < 0.3%) of ferromagnetic layers. To address this, we developed a synthetic antiferromagnetic spin-valve (SAF-SV) heterostructure [Ta/NiFe/Ru/NiFe/Cu/NiFe/Hf/Pt] that enables efficient giant magnetoresistance (GMR)-based detection of SHNO dynamics at room temperature. The NiFe/Ru/NiFe SAF reference layer, operating in the spin-flop state, couples with the NiFe free layer through a Cu spacer to achieve a remarkable GMR ratio of 0.568% - exhibiting complete independence of magnetic field/current orientation. Spin-torque ferromagnetic resonance (ST-FMR) verifies that the ferromagnetic resonance linewidth of the free layer can be effectively modulated by dc current through the Pt heavy metal layer, while maintaining decoupled dynamics from the SAF layer. Thermal management via high-thermal-conductivity SiC substrates and AlN capping layers successfully mitigates current-shunting-induced Joule heating. Notably, stable auto-oscillation peaks are observed at 0.82 mA bias current, with oscillation frequency tunable by external magnetic field and potential dual-mode behavior at low fields. This work establishes a new paradigm for room-temperature, high-power spintronic oscillators, offering significant potential for neuromorphic computing and coherent RF communication applications.