标题： 肖伯尼克-德哈斯振荡和HfTe2中的平面霍尔效应 显示英文标题

标题： Shubnikov-de Haas oscillations and planar Hall effect in HfTe2

摘要： 层状过渡金属二硫化物(TMD) HfTe2是一种近年来引起越来越多关注的拓扑半金属候选材料。费米面的图谱对于理解其性质具有重要意义。在此，我们研究了HfTe2中的肖伯尼科夫-德哈斯(SdH)振荡和平面霍尔效应(PHE)。通过熔融法生长的单晶在14 T和2 K下表现出最大的未饱和磁阻(MR)效应，为1.1*104%。角度分辨的SdH振荡表明费米面由三个具有不同各向异性的袋状结构组成。此外，在宽温度范围内，我们观察到了PHE和各向异性MR(AMR)效应。系统中量化了有效质量、载流子密度和量子输运迁移率，并讨论了贝里相位。我们的工作为该半金属的电子结构和费米面提供了关键的见解。 显示英文摘要

摘要： Layered transition-metal dichalcogenide (TMD) HfTe2 is a topological semimetal candidate with increasing attentions recently. The map of the Fermi surface is of interest and importance to understand its properties. Here we present a study of Shubnikov-de Haas (SdH) oscillations and planar Hall effect (PHE) in HfTe2. The single crystals grown by flux method show the largest unsaturated magnetoresistance (MR) effect of 1.1*104 % at 14 T and 2 K. The angle-resolved SdH oscillations reveal that the Fermi surface consists of three pockets with different anisotropy. In addition, we observe PHE and anisotropic MR (AMR) effect in the material for a wide temperature range. The effective mass, carrier density and quantum transport mobility are quantified in the system, and the Berry phase is discussed. Our work provides crucial insights into the electronic structure and the Fermi surface of the semimetal.