标题： 单电子晶体管在固态量子计算读出中的分析与几何优化 显示英文标题

标题： Analysis and Geometric Optimization of Single Electron Transistors for Read-Out in Solid-State Quantum Computing

摘要： 单电子晶体管（SET）作为纳米级电荷计，提供了无与伦比的机会，能够测量小于一个电子的电荷变化。 SET已被提议用于固态量子计算中的读出方案，其中量子信息处理的结果取决于附近量子点上单个电子的位置。 在本文中，我们研究了各种SET的几何结构，以最大化器件对量子点之间电荷转移的敏感性。 通过使用有限元建模，我们模拟了Al/Al2O3 SET的材料和几何结构，以测量硅基底下量子点的状态。 这项研究是出于构建可扩展量子计算机的追求，尽管所使用的方法主要是电路理论的方法。 因此，我们提供了适用于任何在经典/量子界面工作的电子设备的有用技术。 显示英文摘要

摘要： The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where quantum information processing outcomes depend on the location of a single electron on nearby quantum dots. In this paper we investigate various geometries of a SET in order to maximize the device's sensitivity to charge transfer between quantum dots. Through the use of finite element modeling we model the materials and geometries of an Al/Al2O3 SET measuring the state of quantum dots in the Si substrate beneath. The investigation is motivated by the quest to build a scalable quantum computer, though the methodology used is primarily that of circuit theory. As such we provide useful techniques for any electronic device operating at the classical/quantum interface.