标题： 变分量子蒙特卡罗基态的GaAs 显示英文标题

标题： Variational quantum Monte Carlo ground state of GaAs

摘要： 变分量子蒙特卡罗计算报告了体态 GaAs 半导体，以提供基态能量、晶格常数、体积模量和一些派生性质的数值。 统计精度显著高于与实验值的剩余差异，特别是总能上限。 与实验的符合情况令人满意。 结果也与密度泛函计算的结果进行了比较。 我们结果的准确性可与这些计算中的最佳结果相媲美。 显示英文摘要

摘要： Variational quantum Monte Carlo calculations are reported for the bulk GaAs semiconductor in order to present values for the ground-state energy, the lattice constant, the bulk modulus, and some derived properties. The statistical accuracy is significantly higher than the remaining differences to the experimental values, especially for the total-energy upper bound. The agreement with experiment is satisfactory. The results are also compared with those of density functional calculations. The accuracy of our results is comparable to the best of those calculations.