Title: On the Performance of Dual-Gate Reconfigurable Nanowire Transistors Show Chinese title

Title: 双栅可重构纳米线晶体管的性能

Abstract: We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this end, dual-gate silicon nanowire (SiNW) FETs are fabricated based on anisotropic wet chemical silicon etching and nickel silicidation yielding silicide-SiNW Schottky junctions at source and drain. Whereas in PGAD-configuration ambipolar operation is suppressed, switching is deteriorated due to the injection through a Schottky-barrier. Operating the RFET in PGAS configuration yields a switching behavior close to a conventional MOSFET. This, howewer, needs to be traded off against strongly non-linear output characteristics for small bias. Show Chinese abstract

Abstract: 我们研究双栅可重构场效应晶体管（RFET）在漏极程序栅（PGAD）和源极程序栅（PGAS）配置下的操作。 为此，基于各向异性湿化学硅蚀刻和镍硅化作用制造了双栅硅纳米线（SiNW）FET，从而在源极和漏极处形成硅化物-SiNW肖特基结。 而在PGAD配置中，双极性操作受到抑制，由于通过肖特基势垒的注入导致开关性能下降。 在PGAS配置下操作RFET可以得到接近传统MOSFET的开关行为。 然而，这需要与小偏置下的强非线性输出特性进行权衡。