Title: Spin texture and tunneling magnetoresistance in atomically thin CrSBr Show Chinese title

Title: 自旋纹理和原子薄层 CrSBr 中的隧穿磁阻效应

Abstract: The exploration of spin configurations and magnetoresistance in van der Waals magnetic semiconductors, particularly in the realm of thin-layer structures, is of paramount significance for the development of two-dimensional spintronic nanodevices. In this letter, we present detailed magneto-transport and photoluminescence studies on few-layer CrSBr flakes utilizing a vertical tunneling device configuration. Our investigations revealed complex magnetic states along the evolutionary path of few-layer CrSBr. We observed intermediate states exhibiting identical net magnetization demonstrate rectification properties, reminiscent of a diode-like behavior at positive and negative bias voltages. Notably, in devices with 5-layer CrSBr, we detected an intriguing positive magnetoresistive state when subjected to an in-plane magnetic field along the b-axis. The implementation of the Mott two-current model successfully calculated the tunneling resistance of different magnetic states, thereby elucidating the spin configurations responsible for the observed transport phenomena. These insights not only provide new perspectives on the intricate spin textures of two-dimensional CrSBr but also highlight the efficacy of tunneling measurements as a sensitive method for probing magnetic order in van der Waals materials. Show Chinese abstract

Abstract: 自旋构型和磁电阻在范德华磁性半导体中的研究，特别是在薄层结构领域，对于二维自旋电子学纳米器件的发展具有重要意义。 在本简报中，我们利用垂直隧穿器件结构对少层CrSBr薄片进行了详细的磁输运和光致发光研究。 我们的研究揭示了少层CrSBr在演化路径上的复杂磁态。 我们观察到中间态表现出相同的净磁化强度，显示出整流特性，在正向和负向偏压下呈现出类似二极管的行为。 值得注意的是，在5层CrSBr器件中，当施加沿b轴的面内磁场时，我们检测到了一种有趣的正磁电阻状态。 Mott两电流模型的成功应用计算了不同磁态的隧穿电阻，从而阐明了导致观察到的输运现象的自旋构型。 这些见解不仅为二维CrSBr的复杂自旋纹理提供了新的视角，还突显了隧穿测量作为探测范德华材料磁序的敏感方法的有效性。