Title: 400-Gbps/$λ$ Ultrafast Silicon Microring Modulator for Scalable Optical Compute Interconnects Show Chinese title

Title: 400吉比特每秒/$λ$超快硅微环调制器用于可扩展的光计算互连

Abstract: The exponential growth of artificial intelligence (AI) workloads is driving an urgent demand for optical interconnects with ultrahigh bandwidth, energy efficiency, and scalability. Silicon photonics, with its CMOS compatibility and wafer-scale manufacturability, has emerged as a promising platform for optical interconnect architectures. Silicon microring modulators (MRMs), with their compact footprint, low power consumption, and high modulation efficiency, have become ideal devices for modulation in interconnects. However, silicon MRMS have so far been constrained by the trade-off between modulation efficiency and bandwidth, hindering their potential for 400 Gbps-per-wavelength operation. To mitigate this trade-off, here we demonstrate a wafer-level fabricated and high-bandwidth silicon MRM with a novel heavily-doped trench-integrated structure on a 300-mm silicon photonic platform, achieving both outstanding device performance and remarkable wafer-scale uniformity. Exploiting dual operation modes: self-biasing for energy-efficient scale-up interconnects and depletion driving for ultrafast scale-out links, the device supports error-free 32-Gbps NRZ transmission over 2-km SSMF with only 0.43-Vpp drive and zero electrical bias, yielding energy efficiency of 0.97 fJ/bit without DSP. At higher swings, it further supports 280-Gbps PAM4 and error-free 80-Gbps NRZ optical modulation. For scale-out interconnects, open eye diagrams are achieved at 200 Gbps (NRZ), 360 Gbps (PAM4), and a record 400 Gbps (PAM6), establishing the first wafer-scale silicon MRM solution reaching 400 Gbps/$\lambda$. The sub-fJ/bit energy efficiency and high bandwidth demonstrated in this work establish the MRM as a scalable, high-performance solution for next-generation optical interconnect architectures in AI computing networks Show Chinese abstract

Abstract: 人工智能（AI）工作负载的指数增长正在推动对具有超大带宽、能效和可扩展性的光互连的迫切需求。 硅光子学凭借其与CMOS兼容性和晶圆规模制造能力，已成为光互连架构的有前途的平台。 硅微环调制器（MRMs），由于其紧凑的占地面积、低功耗和高调制效率，已成为互连中调制的理想器件。 然而，到目前为止，硅MRMs受到调制效率和带宽之间权衡的限制，阻碍了其在每波长400 Gbps操作中的潜力。 为了缓解这种权衡，我们在这里展示了一种在300毫米硅光子平台上制造的高带宽硅MRM，采用一种新颖的重掺杂沟槽集成结构，实现了出色的器件性能和显著的晶圆规模均匀性。 利用双操作模式：自偏置用于节能的扩展互连和耗尽驱动用于超高速的扩展链接，该器件支持在2公里SSMF上无错误的32-Gbps NRZ传输，仅需0.43-Vpp驱动和零电气偏置，实现0.97 fJ/bit的能效，无需DSP。 在更高的摆幅下，它进一步支持280-Gbps PAM4和无错误的80-Gbps NRZ光调制。 对于扩展链接互连，在200 Gbps（NRZ）、360 Gbps（PAM4）和创纪录的400 Gbps（PAM6）下实现了开放的眼图，确立了第一个达到400 Gbps/$\lambda$的晶圆规模硅MRM解决方案。 本工作中展示的亚fJ/bit能效和高带宽确立了MRM作为下一代人工智能计算网络中可扩展、高性能光互连架构的解决方案。