Title: Sub-nanosecond heat-based logic, writing and reset in an antiferromagnetic magnetoresistive memory Show Chinese title

Title: 基于亚纳秒热量的逻辑，以及在反铁磁磁阻存储器中的写入和重置

Abstract: Thermal logic aims to create thermal counterparts to electronic circuits. In this work, we investigate experimentally the response of an analog memory device based on a thin film of an antiferromagnetic metal CuMnAs to bursts of heat pulses generated by the absorption of femtosecond laser pulses at room ambient temperature. When a threshold temperature in the heat-based short-term memory of the device is exceeded, the output of the in-memory logic operations is transferred within the same device to a long-term memory, where it can be retrieved at macroscopic times. The long-term memory is based on magnetoresistive switching from a reference low-resistive uniform magnetic state to high-resistive metastable nanofragmented magnetic states. The in-memory heat-based logic operations and the conversion of the outputs into the electrically-readable long-term magnetoresistive memory were performed at sub-nanosecond time scales, making them compatible with the GHz frequencies of standard electronics. Finally, we demonstrate the possibility of rapidly resetting the long-term memory to the reference low-resistive state by heat pulses. Show Chinese abstract

Abstract: 热逻辑旨在创建电子电路的热对应物。 在本工作中，我们实验研究了基于反铁磁金属CuMnAs薄膜的模拟存储器件对由室温下飞秒激光脉冲吸收产生的热脉冲爆发的响应。 当器件基于热量的短期记忆中的阈值温度被超过时，内存中逻辑操作的输出会在同一器件内转移到长期记忆中，在宏观时间尺度上可以被检索。 长期记忆基于从参考低电阻均匀磁态到高电阻亚稳纳米碎片磁态的磁阻开关。 内存中的基于热量的逻辑操作以及将输出转换为电可读的长期磁阻记忆是在亚纳秒时间尺度上进行的，使其与标准电子设备的GHz频率兼容。 最后，我们展示了通过热脉冲快速将长期记忆重置到参考低电阻状态的可能性。