标题： n型GaAs单极纳米LED中的电致发光 显示英文标题

标题： Electroluminescence in n-type GaAs unipolar nanoLEDs

摘要： 在本文中，我们报告了在约866纳米处从n-i-n单极（电子传输）III-V GaAs纳米LED中观察到的电致发光（EL）。 这些器件由顶部直径为166纳米的纳米柱组成，排列成10x10的柱阵列。 通过在n-i-n二极管的外延层结构中引入AlAs/GaAs/AlAs双势垒量子阱，实现了通过碰撞电离和齐纳隧穿产生的空穴。 时间分辨的EL测量显示衰减寿命大于300皮秒，使我们能够估计在亚毫安电流注入下内部量子效率（IQE）高于2%。 这些结果展示了新型n型纳米尺度发光器件的潜力。 显示英文摘要

摘要： In this Letter, we report the observation of electroluminescence (EL) at around 866 nm from n-i-n unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with top diameter of 166 nm, arranged in a 10x10 pillar array. Hole generation through impact ionization and Zener tunnelling is achieved by incorporating an AlAs/GaAs/AlAs double-barrier quantum well within the epilayer structure of the n-i-n diode. Time-resolved EL measurements reveal decay lifetimes larger than 300 ps, allowing us to estimate an internal quantum efficiency (IQE) higher than 2 per cent at sub-mA current injection. These results demonstrate the potential for a new class of n-type nanoscale light-emitting devices.