标题： 为量子光学应用创建钻石色心 显示英文标题

标题： Creating diamond color centers for quantum optical applications

摘要： 氮化硼空位（NV）中心在金刚石中作为固态量子比特具有独特的前景。 这是因为它们具有较大的偶极矩、方便的能级结构以及非常长的室温相干时间。 通常，使用离子辐照和随后退火的组合来创建这些中心，然而对于量子计算的严格要求，所有过程都需要优化，并且必须减轻由于植入过程本身引起的残留损伤导致的退相干。 为此，我们研究了通过在宽范围通量下植入2MeV氦离子形成的NV$^-$、NV$^0$和GR1中心的光致发光（PL）。 样品在$600^{\circ}$C 下退火，以最小化残留空位扩散，从而可以同时分析NV中心和辐照诱导空位（GR1）的PL。 我们发现随着离子通量的增加，PL强度呈非单调变化，NV$^0$/NV$^-$和GR1/(NV$^0$ + NV$^1$) 比例单调增加，以及随着离子通量的增加，零声子线的非均匀展宽增大。 所有这些结果为NV量子比特的最佳形成条件提供了重要的见解。 我们将这些发现应用于使用振动侧带的非共振光子量子存储方案。 显示英文摘要

摘要： Nitrogen vacancy (NV) centers in diamond have distinct promise as solid-state qubits. This is because of their large dipole moment, convenient level structure and very long room-temperature coherence times. In general, a combination of ion irradiation and subsequent annealing is used to create the centers, however for the rigorous demands of quantum computing all processes need to be optimized, and decoherence due to the residual damage caused by the implantation process itself must be mitigated. To that end we have studied photoluminescence (PL) from NV$^-$, NV$^0$ and GR1 centers formed by ion implantation of 2MeV He ions over a wide range of fluences. The sample was annealed at $600^{\circ}$C to minimize residual vacancy diffusion, allowing for the concurrent analysis of PL from NV centers and irradiation induced vacancies (GR1). We find non-monotic PL intensities with increasing ion fluence, monotonic increasing PL in NV$^0$/NV$^-$ and GR1/(NV$^0$ + NV$^1$) ratios, and increasing inhomogeneous broadening of the zero-phonon lines with increasing ion fluence. All these results shed important light on the optimal formation conditions for NV qubits. We apply our findings to an off-resonant photonic quantum memory scheme using vibronic sidebands.