标题： 锗纳米晶体在硅中的发光衰减动力学 显示英文标题

标题： Luminescence decay dynamics of germanium nanocrystals in silicon

摘要： 锗纳米晶体在晶体硅中的发光衰减动力学已在16 K至室温范围内进行研究。 在室温下，特征衰减时间约为50纳秒，而在低温下则扩展到微秒范围。 衰减主要由非辐射过程主导，这些过程表现出几毫电子伏特的典型热激活能。 显示英文摘要

摘要： The dynamics of the luminescence decay from germanium nanocrystals embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. At room temperature the characteristic decay time is of the order of 50 nanoseconds while it extends into the microsecond range at low temperatures. The decay is dominated by non-radiative processes, which show a typical thermal activation energy of a few meV.