标题： 单光子 regime 中具有低微波损耗的单晶硅电容器 显示英文标题

标题： Single crystal silicon capacitors with low microwave loss in the single photon regime

摘要： 我们使用单晶硅介电平行板电容器制造了集总元件几何结构的超导微波谐振器，其电容值大于2 pF。铝制器件在20 mK温度下的单光子激发状态下，谐振频率在4.0到6.5 GHz之间，表现出平均内部品质因数Q_i为2 x 10^5。将所有观察到的损耗归因于电容元件，我们的测量结果对应于本征硅的损耗角正切为5 x 10^-6。这种损耗水平比目前采用非晶介电材料的结构中观察到的低一个数量级，因此单晶硅电容器成为实现长寿命量子电路的一种有吸引力且稳健的途径。 显示英文摘要

摘要： We have fabricated superconducting microwave resonators in a lumped element geometry using single crystal silicon dielectric parallel plate capacitors with C >2 pF. Aluminum devices with resonant frequencies between 4.0 and 6.5 GHz exhibited an average internal quality factor Q_i of 2 x 10^5 in the single photon excitation regime at T = 20 mK. Attributing all the observed loss to the capacitive element, our measurements correspond to a loss tangent of intrinsic silicon of 5 x 10^-6. This level of loss is an order of magnitude lower than is currently observed in structures incorporating amorphous dielectric materials, thus making single crystal silicon capacitors an attractive, robust route for realizing long-lived quantum circuits.