标题： 单根InP/InAsP/InP纳米线量子点中的纵向和横向激子自旋弛豫时间 显示英文标题

标题： Longitudinal and transverse exciton spin relaxation times in single InP/InAsP/InP nanowire quantum dots

摘要： 我们研究了嵌入在直立InP纳米线中的单个InAsP量子点的光学特性。 通过外延生长和电子束光刻技术制备了纳米线的规则阵列。 通过一阶光子关联测量观察到，随着激发功率的降低，激子态的横向激子自旋弛豫时间延长。 这种行为可以通过InP纳米线中环境电荷的高斯涨落引起的运动窄化机制很好地解释。 通过使用基于斯托克斯参数表示的穆勒计算法，评估了来自单个纳米线量子点中束缚激子态发射的随机偏振度的纵向激子自旋弛豫时间。 显示英文摘要

摘要： We have investigated the optical properties of a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires was fabricated by epitaxial growth and electron-beam patterning. The elongation of transverse exciton spin relaxation time of the exciton state with decreasing excitation power was observed by first-order photon correlation measurements. This behavior is well explained by the motional narrowing mechanism induced by Gaussian fluctuations of environmental charges in the InP nanowire. The longitudinal exciton spin relaxation time was evaluated by the degree of the random polarization of emission originating from exciton state confined in a single nanowire quantum dots by using Mueller Calculus based on Stokes parameters representation.