标题： 室温下铁磁半导体GeFe中的局域铁磁性和纳米尺度畴生长 显示英文标题

标题： Room temperature local ferromagnetism and nanoscale domain growth in the ferromagnetic semiconductor GeFe

摘要： 我们使用软X射线磁圆二色性技术研究了基于第IV族的铁磁半导体GeFe的局部电子结构和磁性特性。 我们的结果表明，掺杂的Fe 3d电子与Ge 4p态强烈杂化，并相对于自旋磁矩具有异常大的轨道磁矩；即morb/mspin = 0.3。 我们发现，在GeFe薄膜高Fe含量区域通过铁磁交换相互作用形成的局部铁磁畴在室温下存在，远高于居里温度。 我们首次观察到有趣的纳米尺度畴生长过程，其中铁磁畴随着温度降低而扩展，随后整个薄膜在居里温度时转变为铁磁状态。 显示英文摘要

摘要： We investigate the local electronic structure and magnetic properties of the group IV based ferromagnetic semiconductor, GeFe, using soft X ray magnetic circular dichroism. Our results show that the doped Fe 3d electrons are strongly hybridized with the Ge 4p states, and have an unusually large orbital magnetic moment relative to the spin magnetic moment; i.e., morb/mspin = 0.3. We find that local ferromagnetic domains, which are formed through ferromagnetic exchange interactions in the high Fe content regions of the GeFe films, exist at room temperature, well above the Curie temperature. We demonstrate the first observation of the intriguing nanoscale domain growth process in which ferromagnetic domains expand as the temperature decreases, followed by a transition of the entire film into a ferromagnetic state at the Curie temperature.