标题： 钒牺牲层作为制造自支撑Heusler形状记忆合金的新方法 显示英文标题

标题： Vanadium sacrificial layers as a novel approach for the fabrication of freestanding Heusler Shape Memory Alloys

摘要： 在本研究中，我们报告了一种制备自支撑磁热薄膜的方法。 非化学计量比的Heusler合金Ni-Mn-Sn、Ni-Co-Mn-Sn和Ni-Co-Mn-Al通过溅射沉积法制备。 在基底和Heusler薄膜之间添加了一层牺牲钒层。 通过选择性湿法化学蚀刻可以去除钒层。 指出了钒层结晶和Heusler薄膜外延生长的条件。 详细比较了自支撑薄膜和制备后的薄膜的磁性和结构特性。 本研究的主要重点是基底约束对马氏体转变的影响。 显示英文摘要

摘要： In this study we report a method for the preparation of freestanding magnetocaloric thin films. Non-stoichiometric Heusler alloys Ni-Mn-Sn, Ni-Co-Mn-Sn and Ni-Co-Mn-Al are prepared via sputter deposition. A sacrificial vanadium layer is added between the substrate and the Heusler film. By means of selective wet-chemical etching the vanadium layer can be removed. Conditions for the crystallization of Vanadium layers and epitaxial growth of the Heusler films are indicated. Magnetic and structural properties of freestanding and as-prepared films are compared in detail. The main focus of this study is on the influence of substrate constraints on the Martensitic transistion.