标题： 莫特转变的普适类 显示英文标题

标题： Universality Class of the Mott Transition

摘要： 通过在层状有机导体EtMe3P[Pd(dmit)2]2中的Mott转变测量电导率和热电功率的压力依赖性。 等温压力扫描过程中，热电效应的临界行为提供了对Mott-Hubbard转变的清晰和客观的确定。 在临界终点以上，由热电效应最小值确定的金属-绝缘体交叉点不与电导率作为压力函数的导数的最大值重合。 我们表明，Mott-Hubbard转变的临界指数无论系统维度如何，都属于Ising普遍性类。 显示英文摘要

摘要： Pressure dependence of the conductivity and thermoelectric power is measured through the Mott transition in the layer organic conductor EtMe3P[Pd(dmit)2]2. The critical behavior of the thermoelectric effect provides a clear and objective determination of the Mott-Hubbard transition during the isothermal pressure sweep. Above the critical end point, the metal-insulator crossing, determined by the thermoelectric effect minimum value, is not found to coincide with the maximum of the derivative of the conductivity as a function of pressure. We show that the critical exponents of the Mott-Hubbard transition fall within the Ising universality class regardless of the dimensionality of the system.