标题： 缺陷诱导的拓扑绝缘体BiSbTeSe2负磁阻和表面态免疫性 显示英文标题

标题： Defect induced negative magnetoresistance and surface state immunity in topological insulator BiSbTeSe2

摘要： 拓扑绝缘体的两个特征特性是背散射的缺失和弱反局域化的出现。 我们发现，在50 K以下的温度下，缺陷的引入导致拓扑绝缘体BiSbTeSe2中磁阻出现负贡献。我们的分析表明，负磁阻来源于由引入无序产生的缺陷态密度的增加，这不会影响表面态。 我们发现随着温度的升高，负磁阻贡献的大小减小，并且拓扑表面态对外部无序具有鲁棒性。 显示英文摘要

摘要： Absence of backscattering and occurrence of weak anti-localization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance in the topological insulator BiSbTeSe2, at temperatures below 50 K. Our analysis shows that the negative magnetoresistance originates from an increase in the density of defect states created by introduction of disorder, which leaves the surface states unaffected. We find a decrease in the magnitude of the negative magnetoresistance contribution with increasing temperature and a robustness of the topological surface states to external disorder.