标题： 一种腔增强型室温宽带拉曼存储器 显示英文标题

标题： A Cavity-Enhanced Room-Temperature Broadband Raman Memory

摘要： 宽带量子存储器在未来的光子量子信息协议中作为多路复用元件具有很大的前景。 碱金属蒸气拉曼存储器结合了高带宽存储、按需读出以及在室温下无碰撞荧光噪声的操作。 然而，之前的实现需要较大的控制脉冲能量，并且受到四波混频噪声的影响。 在此，我们展示了一种拉曼存储器，其中通过一个低精细度双折射腔增强存储相互作用，该腔同时与信号和控制场共振，显著降低了驱动存储器所需的能量。 通过为反斯托克斯场设计抗共振，我们还抑制了四波混频噪声，并报告了迄今为止在拉曼型暖蒸气存储器中达到的最低无条件噪声底，为$(15\pm2)\times10^{-3}$光子每脉冲，总效率为$(9.5\pm0.5)$%。 显示英文摘要

摘要： Broadband quantum memories hold great promise as multiplexing elements in future photonic quantum information protocols. Alkali vapour Raman memories combine high-bandwidth storage, on-demand read-out, and operation at room temperature without collisional fluorescence noise. However, previous implementations have required large control pulse energies and suffered from four-wave mixing noise. Here we present a Raman memory where the storage interaction is enhanced by a low-finesse birefringent cavity tuned into simultaneous resonance with the signal and control fields, dramatically reducing the energy required to drive the memory. By engineering anti-resonance for the anti-Stokes field, we also suppress the four-wave mixing noise and report the lowest unconditional noise floor yet achieved in a Raman-type warm vapour memory, $(15\pm2)\times10^{-3}$ photons per pulse, with a total efficiency of $(9.5\pm0.5)$%.