标题： 平面内磁场和施加应变在量子自旋霍尔系统中的影响：应用于InAs/GaSb量子阱 显示英文标题

标题： The effect of in-plane magnetic field and applied strain in quantum spin Hall systems: application to InAs/GaSb quantum wells

摘要： 受最近在InAs/GaSb量子阱中发现的量子自旋霍尔效应\cite{du2013}$^,$\cite{xu2014} 的启发，我们通过Landauer-Butikker形式理论研究面内磁场和应变效应对电荷电导率量化的影响。 我们的理论预测了电导率的量化在高达20特斯拉的强磁场下仍具有鲁棒性。 我们使用无序跳跃项来模拟应变，并表明应变可能有助于电导率的量化。 将讨论与实验的相关性。 显示英文摘要

摘要： Motivated by the recent discovery of quantized spin Hall effect in InAs/GaSb quantum wells\cite{du2013}$^,$\cite{xu2014}, we theoretically study the effects of in-plane magnetic field and strain effect to the quantization of charge conductance by using Landauer-Butikker formalism. Our theory predicts a robustness of the conductance quantization against the magnetic field up to a very high field of 20 tesla. We use a disordered hopping term to model the strain and show that the strain may help the quantization of the conductance. Relevance to the experiments will be discussed.