标题： AlN缓冲层以改善SmN在GaN (0001)上的外延生长 显示英文标题

标题： AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)

摘要： 在通过分子束外延在Ga极性GaN (0001)模板上进行SmN薄膜的外延生长的原位研究中报告了这一结果。 使用X射线光电子能谱我们发现，在生长的最初阶段Ga会聚集在表面。 我们证明，通过在开始SmN生长之前生长几单层的AlN可以简单地抑制与Ga表面聚集相关的问题。 这导致通过X射线衍射评估的SmN薄膜结晶度显著提高。 显示英文摘要

摘要： An in situ study of the epitaxial growth of SmN thin films on Ga-polar GaN (0001)templates by molecular beam epitaxy is reported. Using X-ray photoelectron spectroscopy we found that Ga segregates at the surface during the first stages of growth. We showed that the problem related to Ga surface segregation can be simply suppressed by growing a few monolayers of AlN before starting the SmN growth. This results in a significant improvement of the crystallinity of SmN thin films assessed by X-ray diffraction.