标题： 外延Ru/Co2FeAl/MgO异质结构中磁各向异性的电压控制 显示英文标题

标题： Voltage control of magnetic anisotropy in epitaxial Ru/Co2FeAl/MgO heterostructures

摘要： 电压控制磁各向异性（VCMA）在磁性异质结构中是实现超低功耗节能电子设备的关键技术。 在此，我们首次展示了在具有界面垂直磁各向异性（PMA）的新颖外延Ru/Co2FeAl（CFA）/MgO异质结构中的VCMA效应。 制备了具有Ru/CFA/MgO结构的垂直磁化隧道结，并表现出对CFA自由层切换场的有效电压控制。 在室温（4 K）下，CFA薄膜获得了108（139）fJ/Vm的大的VCMA系数。 通过重复测量确认了异质结构的界面稳定性。 还研究了界面PMA和VCMA效应的温度依赖性。 发现温度依赖性遵循饱和磁化强度的幂律，指数约为~2。 本工作中观察到的显著VCMA效应表明，Ru/CFA/MgO异质结构可能是具有电压控制的自旋电子器件的有前途的候选之一。 显示英文摘要

摘要： Voltage control of magnetic anisotropy (VCMA) in magnetic heterostructures is a key technology for achieving energy-efficiency electronic devices with ultralow power consumption. Here, we report the first demonstration of the VCMA effect in novel epitaxial Ru/Co2FeAl(CFA)/MgO heterostructures with interfacial perpendicular magnetic anisotropy (PMA). Perpendicularly magnetized tunnel junctions with the structure of Ru/CFA/MgO were fabricated and exhibited an effective voltage control on switching fields for the CFA free layer. A large VCMA coefficient of 108 (139) fJ/Vm for the CFA film was achieved at room temperature (4 K). The interfacial stability in the heterostructure was confirmed by repeating measurements. Temperature dependences of both the interfacial PMA and the VCMA effect were also investigated. It is found that the temperature dependences follow power laws of the saturation magnetization with an exponent of ~2. The significant VCMA effect observed in this work indicates that the Ru/CFA/MgO heterostructure could be one of the promising candidates for spintronic devices with voltage control.