标题： 应变GaN量子阱FET在单晶块状AlN衬底上 显示英文标题

标题： Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates

摘要： 我们报告了在单晶块体AlN衬底上通过分子束外延生长的应变GaN量子阱场效应晶体管的首次实现。 所制造的双异质结构FET表现出二维电子气（2DEG）密度超过2x10^13/cm2。 通过n+ GaN MBE再生长工艺形成了与2DEG沟道的欧姆接触，接触电阻为0.13欧姆-毫米。 使用量子阱作为光学标记的拉曼光谱揭示了量子阱中的应变以及再生长GaN接触中的应变松弛。 一个65纳米长的矩形栅极器件展示了创纪录的高直流漏极电流驱动能力，达到2.0 A/mm，峰值外禀跨导为250 mS/mm。 该器件的小信号射频性能实现了电流增益截止频率fT~120 GHz。 直流和射频性能表明，块体AlN衬底为未来高压和高功率微波应用的应变量子阱氮化物晶体管提供了一个有吸引力的替代平台。 显示英文摘要

摘要： We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a two- dimensional electron gas (2DEG) density in excess of 2x10^13/cm2. Ohmic contacts to the 2DEG channel were formed by n+ GaN MBE regrowth process, with a contact resistance of 0.13 Ohm-mm. Raman spectroscopy using the quantum well as an optical marker reveals the strain in the quantum well, and strain relaxation in the regrown GaN contacts. A 65-nm-long rectangular-gate device showed a record high DC drain current drive of 2.0 A/mm and peak extrinsic transconductance of 250 mS/mm. Small-signal RF performance of the device achieved current gain cutoff frequency fT~120 GHz. The DC and RF performance demonstrate that bulk AlN substrates offer an attractive alternative platform for strained quantum well nitride transistors for future high-voltage and high-power microwave applications.