标题： GEM几何结构对气体增益均匀性影响的仿真研究 显示英文标题

标题： Simulation study on impact of GEM geometry for gas gain uniformity

摘要： 气体电子倍增器（GEM）是气体放大的一种装置，作为许多实验探测器的放大部分可用。 一个具有50 $\mu m$ 厚绝缘层的GEM很受欢迎，并在许多实验领域被广泛使用。 然而，由于仅使用一个50 $\mu m$ 厚的GEM提供的气体增益只有几十倍，因此需要使用多层才能获得足够的气体增益。 另一方面，一种将放大区域从50扩展到100 $\mu m$ 的厚GEM可以提供更高的气体增益，即使在双层堆叠配置下也能满足需求。 但这里报告的使用大面积100 $\mu m$ 厚GEM测量的气体增益均匀性观察到了显著的不均匀性，达到了50%以上。 我们使用 $\rm{garfield^{++}}$ 研究了由GEM几何结构产生的气体增益均匀性，并考虑了100 $\mu m$ 厚GEM的最佳几何结构。 显示英文摘要

摘要： Gas Electron Multiplier (GEM) is one of the devices for gas amplification and available as an amplification part of detectors for many experiments. A GEM with a 50 $\mu m$ thick insulator is popular and widely used in many experimental fields. However it is necessary to use several layers of them to get sufficient gas gain because gas gain which is provided with only one 50 $\mu m$ thick GEM is only several times ten. On the other hand, a thick GEM whose amplification area is expanded from 50 to 100 $\mu m$ to get higher gas gain which can be sufficient even with a double stack configuration. But the measurement of gas gain uniformity using a large area 100 $\mu m$ thick GEM reported here observed sizable non-uniformity which reached more than 50\%. We investigated gas gain uniformity which is derived from geometries of the GEM using $\rm{garfield^{++}}$ and considered an optimal geometry for the 100 $\mu m$ thick GEM.