标题： 基于电压控制的拓扑自旋开关用于超低能耗计算——性能建模与基准测试 显示英文标题

标题： Voltage-Controlled Topological-Spin Switch for Ultra-Low-Energy Computing--Performance Modeling and Benchmarking

摘要： 一种使用混合拓扑绝缘体-磁性绝缘体多铁体的电压控制拓扑自旋开关（vTOPSS）被提出，该开关可以以低于10 aJ/位的能量和约$10^{-27}$ Js的能量延迟积实现布尔逻辑操作。 该器件使用一种拓扑绝缘体（TI），其在室温下将电场转换为自旋扭矩的效率是迄今为止观察到的最高，以及一种对给定自旋扭矩响应迅速的低磁矩磁性绝缘体（MI）。 我们提出了vTOPSS的操作理论，建立了其性能指标的分析模型，阐明了性能与尺寸和电压的关系，并将vTOPSS与现有的基于自旋和CMOS器件进行了基准测试。 与现有的基于自旋的器件，如全自旋逻辑和电荷-自旋逻辑相比，vTOPSS具有100$\times$的更低能量耗散和（40-100）$\times$的更低能量延迟积。 随着实验进展和材料性能的提高，我们表明vTOPSS的能量延迟积可以降低到$10^{-29}$ Js，与现有的CMOS技术相当。 最后，我们证明了在CMOS逻辑中主导性能的互连问题对于vTOPSS来说相对不那么重要，这意味着确实可以使用高电阻材料来互连vTOPSS器件。 显示英文摘要

摘要： A voltage-controlled topological-spin switch (vTOPSS) that uses a hybrid topological insulator-magnetic insulator multiferroic is presented that can implement Boolean logic operations with sub-10 aJ energy-per-bit and energy-delay product on the order of $10^{-27}$ Js. The device uses a topological insulator (TI), which has the highest efficiency of conversion of electric field to spin torque yet observed at room temperature, and a low-moment magnetic insulator (MI) that can respond rapidly to a given spin torque. We present the theory of operation of vTOPSS, develop analytic models of its performance metrics, elucidate performance scaling with dimensions and voltage, and benchmark vTOPSS against existing spin-based and CMOS devices. Compared to existing spin-based devices, such as all-spin logic and charge-spin logic, vTOPSS offers 100$\times$ lower energy dissipation and (40-100)$\times$ lower energy-delay product. With experimental advances and improved material properties, we show that the energy-delay product of vTOPSS can be lowered to $10^{-29}$ Js, competitive against existing CMOS technology. Finally, we establish that interconnect issues that dominate the performance in CMOS logic are relatively less significant for vTOPSS, implying that highly resistive materials can indeed be used to interconnect vTOPSS devices.