标题： 隧道注入半导体激光器中结构设计与相互作用过程的相互作用 显示英文标题

标题： Interplay of structural design and interaction processes in tunnel-injection semiconductor lasers

摘要： 隧道注入激光器相较于传统激光设计具有多种优势。 在本文中，我们对基于量子点的激光器件中的隧道注入过程的物理机制进行了理论分析。 我们从耦合系统中各状态之间的散射角度描述载流子动力学，该耦合系统包括注入器量子阱、隧穿势垒和量子点。 我们的分析表明，目前的基于量子点的激光器如何受益于隧道注入设计。 我们发现，通常假设的LO声子共振条件对载流子注入量子点状态的速率只有较弱的影响。 另一方面，我们的研究显示，量子点和量子阱状态的能量对齐会改变注入效率，因为它控制了杂化强度。 我们对隧穿的描述包括声子介导和库仑散射贡献，并基于材料现实的电子结构计算。 显示英文摘要

摘要： Tunnel-injection lasers promise various advantages in comparison to conventional laser designs. In this paper, we present a theoretical analysis for the physics of the tunnel-injection process in quantum-dot based laser devices. We describe the carrier dynamics in terms of scattering between states of the coupled system consisting of injector quantum-well, tunnel-barrier, and quantum-dots. Our analysis demonstrates how current quantum-dot based lasers can benefit from the tunnel-injection design. We find that the often assumed LO-phonon resonance condition for the level alignment only weakly influences the injection rate of carriers into the quantum-dot states. On the other hand, our investigations show that the energetic alignment of quantum-dot and quantum-well states modifies the injection efficiency, as it controls the hybridization strength. Our description of tunneling includes the phonon-mediated and the Coulomb scattering contributions and is based on material realistic electronic structure calculations.