标题： 通过在核/壳纳米线中应变工程使GaAs带隙能量最多减少40% 显示英文标题

标题： Up to 40 % reduction of the GaAs band gap energy via strain engineering in core/shell nanowires

摘要： 在核/壳纳米线中应变工程的巨大可能性已被探索作为一种替代方法，以调整二元 III-V 半导体的特性，而无需改变其化学组成。 特别是，我们证明在 GaAs/In(x)Ga(1-x)As 或 GaAs/In(x)Al(1-x)As 核/壳纳米线中的 GaAs 核可以承受异常大的失配应变，这在传统的薄膜异质结构中是不可能的。 核心中的内置应变可以通过壳层的成分和厚度进行调节。 足够厚的壳层几乎无应变，而较薄的核心则经历主要为静水张力的应变，这导致 GaAs 带隙能量的减少。 在本工作中获得的最高应变为 7%（x=0.54 时），带隙减少了 40%，这与理论计算一致。 这种对其电子性质的强烈调制使 GaAs 适用于近红外纳米光子学，并可能用于高电子迁移率纳米晶体管。 显示英文摘要

摘要： The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we demonstrate that the GaAs core in GaAs/In(x)Ga(1-x)As or GaAs/In(x)Al(1-x)As core/shell nanowires can sustain unusually large misfit strains that would have been impossible in conventional thin-film heterostructures. The built-in strain in the core can be regulated via the composition and the thickness of the shell. Thick enough shells become almost strain-free, whereas the thin core undergoes a predominantly-hydrostatic tensile strain, which causes the reduction of the GaAs band gap energy. For the highest strain of 7 % in this work (obtained for x=0.54), a remarkable reduction of the band gap by 40 % was achieved in agreement with theoretical calculations. Such strong modulation of its electronic properties renders GaAs suitable for near-infrared nano-photonics and presumably high electron mobility nano-transistors.