标题： 石墨烯硅-on-绝缘体(GSOI)肖特基二极管光电探测器 显示英文标题

标题： Graphene-Silicon-On-Insulator (GSOI) Schottky Diode Photodetectors

摘要： 石墨烯-硅（GS）肖特基结已被证明是一种高效的光探测架构。然而，迄今为止，此类设备用于自由空间光探测的响应速度仅限于10到100千赫兹，波长为$\lambda >$ 500纳米。 在这里，我们展示了在绝缘体上的硅（SOI）衬底上制造的石墨烯-硅肖特基结光电探测器，其响应速度接近1GHz，这归因于光敏硅层厚度减少至10$\mu$米，并且伴随着限制速度的扩散电流的抑制。 石墨烯-绝缘体上的硅光电探测器（GSOI-PD）表现出对响应速度的波长影响可以忽略不计，并且与在块状硅上制造的GS结相比，其灵敏度仅略有妥协。 在环境条件下，GSOI光电探测器的噪声等效功率（NEP）和特定探测率（D$^*$）分别为14.5皮瓦和7.83$\times10^{\rm{10}}$ 厘米 赫兹$^{\rm{1/2}}$瓦$^{\rm{-1}}$。 我们进一步证明，通过结合GSOI-PD与由表面形貌修改形成的微光学元件，可以实现光谱和角度响应的工程设计。 显示英文摘要

摘要： Graphene-silicon (GS) Schottky junctions have been demonstrated as an efficient architecture for photodetection. However, the response speed of such devices for free space light detection has so far been limited to 10's-100's of kHz for wavelength $\lambda >$ 500nm. Here, we demonstrate graphene-silicon Schottky junction photodetectors fabricated on a silicon-on-insulator substrate (SOI) with response speeds approaching 1GHz, attributed to the reduction of the photo-active silicon layer thickness to 10$\mu$m and with it a suppression of speed-limiting diffusion currents. Graphene-silicon-on-insulator photodetectors (GSOI-PDs) exhibit a negligible influence of wavelength on response speed and only a modest compromise in responsivities compared to GS junctions fabricated on bulk silicon. Noise-equivalent-power (NEP) and specific detectivity (D$^*$) of GSOI photodetectors are 14.5pW and 7.83$\times10^{\rm{10}}$ cm Hz$^{\rm{1/2}}$W$^{\rm{-1}}$, respectively, in ambient conditions. We further demonstrate that combining GSOI-PDs with micro-optical elements formed by modifying the surface topography enables engineering of the spectral and angular response.