标题： 卤化物双钙钛矿中的本征缺陷特性在光电应用中的研究 显示英文标题

标题： Intrinsic defect properties in halide double perovskites for optoelectronic applications

摘要： 无铅卤化双钙钛矿，其公式为四元A$_2^+$B'B'$^{3+}$X$_6^-$近来因其无毒性和增强的化学和热力学稳定性，作为无铅卤化钙钛矿基光电材料的替代品引起了广泛关注。 然而，对本征缺陷特性及其对载流子传输和费米能级调节的影响的理解仍然有限。 在本文中，我们表明，通过研究卤化双钙钛矿的相图，可以控制本征缺陷对载流子捕获和费米能级钉扎的影响。 我们揭示了在理想生长条件下生长p型Cs$_2$AgInCl$_6$和 Cs$_2$AgBiCl$_6$以及半绝缘型Cs$_2$AgBiBr$_6$的条件，以实现低陷阱密度，用于目标光伏或可见光/辐射检测应用。 显示英文摘要

摘要： Lead-free halide double perovskites with the formula of quaternary A$_2^+$B'B'$^{3+}$X$_6^-$ have recently attracted intense interest as alternatives to lead-halide-perovskite-based optoelectronic materials for their non-toxicity and enhanced chemical and thermodynamic stability. However, the understanding of intrinsic defect properties and their effects on carrier transport and Fermi level tuning is still limited. In this paper, we show that, by exploring the phase diagram of a halide double perovskite, one can control the effects of intrinsic defects on carrier trapping and Fermi level pinning. We reveal the ideal growth conditions to grow p-type Cs$_2$AgInCl$_6$ and Cs$_2$AgBiCl$_6$ as well as semi-insulating Cs$_2$AgBiBr$_6$ with low trap density for targeted photovoltaic or visible-light/radiation detection application.