标题： 基于同步辐射光电子能谱研究高温下氧化铟对ZnO(0001)表面的钝化作用 显示英文标题

标题： Synchrotron radiation based photoemission studies of indium oxide passivation of ZnO(0001) surface at high temperature

摘要： 通过在位沉积铟金属和高温（600 C - 1000 C）退火对表面反应性ZnO(0001)-Zn终止表面进行钝化。 每次铟沉积和退火循环后，ZnO(0001)表面通过同步辐射光电子能谱进行表征。 光电子能谱研究证实了沉积的铟转化为氧化铟（In2O3和In2Ox）作为表面钝化层。 在不同光子能量下获取了Zn、C、O的核心能级谱以实现高表面灵敏度。 整体核心能级峰（Zn 3p、In 4d、O 1s）的平均结合能位移范围为0.5 eV至0.8 eV。 钝化后的价带谱显示在1000 C时费米能级位移为0.9 eV，功函数从4.06 eV增加到4.77 eV。 通过高温氧化铟钝化，ZnO(0001)表面的向下弯曲转变为0.98 eV的向上弯曲，这对于制作ZnO肖特基接触和器件是合适的。 显示英文摘要

摘要： Passivation of surface reactive ZnO(0001)-Zn terminated surface is carried out by in-situ deposition of indium metal and post deposition annealing at high temperature (600 C - 1000 C). After the every cycle of indium deposition and annealing the ZnO(0001) surface is characterised by synchrotron radiation based photoemission. The photoemission studies confirmed the formation of deposited indium turned into indium oxide (In2O3 and In2Ox) as surface passivation layer. The core level spectra for Zn, C, O, were acquired at different photon energy for high surface sensitivity. Overall core level peaks (Zn 3p, In 4d, O 1s) having average binding shift ranging from 0.5 eV to 0.8 eV. The valance band spectra shows fermi level shift of 0.9 eV after passivation at 1000 C and work function raises form 4.06 eV to 4.77 eV. Downward band bending of ZnO(0001) surface is turned into upward bending of 0.98 eV by indium oxide passivation at high temperature, which is suitable for making ZnO schotty contact and devices.