标题： 外延$β$-Ga$_2$O$_3$薄膜的塞贝克系数的温度依赖性 显示英文标题

标题： Temperature dependence of the Seebeck coefficient of epitaxial $β$-Ga$_2$O$_3$ thin films

摘要： 同质外延金属有机气相 (MOVPE) 生长的掺硅$\beta$-Ga$_2$O$_3$薄膜的塞贝克系数的温度依赖性相对于铝进行了测量。 对于室温，我们发现相对的 塞贝克系数为 $S_{\beta\text{-Ga}_2\text{O}_3\text{-Al}}=(-300\pm20)\;\mu$V/K。 在高温槽温度$T>240$ K 时，散射由电子-声子相互作用决定。 在较低的槽温度介于$T=100$ K 和 $T=300$ K 之间时，塞贝克系数的大小增加在Strattons公式范围内得到解释。 讨论了不同散射机制对塞贝克系数大小的影响，并与霍尔测量结果进行了比较。 显示英文摘要

摘要： The temperature dependence of the Seebeck coefficient of homoepitaxial metal organic vapor phase (MOVPE) grown, silicon doped $\beta$-Ga$_2$O$_3$ thin films was measured relative to aluminum. For room temperature we found the relative Seebeck coefficient of $S_{\beta\text{-Ga}_2\text{O}_3\text{-Al}}=(-300\pm20)\;\mu$V/K. At high bath temperatures $T>240$ K, the scattering is determined by electron-phonon-interaction. At lower bath temperatures between $T=100$ K and $T=300$ K, an increase in the magnitude of the Seebeck coefficient is explained in the frame of Strattons formula. The influence of the different scattering mechanisms on the magnitude of the Seebeck coefficient is discussed and compared with Hall measurement results.