标题： 在氮化铝集成光子学中的明亮高纯度量子发射器 显示英文标题

标题： Bright high-purity quantum emitters in aluminium nitride integrated photonics

摘要： 固态量子发射器（QEs）在基于光子的量子信息处理中是基本的。 人们对在氮化镓半导体中开发高质量的QEs有浓厚的兴趣，因为它们的制造工艺复杂，由光电子学、高电压功率晶体管和微波放大器中日益增长的应用所推动。 在这里，我们报告了基于氮化铝的光子集成电路平台中QEs的生成和直接集成。 对于单个波导集成的QEs，我们测量到芯片外计数率超过$6 \times 10^{4}$次/秒（cps） （饱和率 > $8.6 \times 10^{4}$cps）。 在未图案化的薄膜样品中，我们测量到反聚束现象，具有 $g^{(2)}(0) \sim 0.05$，光子计数率超过 $8 \times 10^{5}$cps（饱和率 > $1 \times 10^{6}$cps）。 尽管自旋和详细的光学线宽测量将留待未来工作，但这些结果已经显示出高质量QEs在一系列III族氮化物器件技术中单片集成的潜力，这将实现新的量子器件机会和工业可扩展性。 显示英文摘要

摘要： Solid-state quantum emitters (QEs) are fundamental in photonic-based quantum information processing. There is strong interest to develop high-quality QEs in III-nitride semiconductors because of their sophisticated manufacturing driven by large and growing applications in optoelectronics, high voltage power transistors, and microwave amplifiers. Here, we report the generation and direct integration of QEs in an aluminium nitride-based photonic integrated circuit platform. For individual waveguide-integrated QEs, we measure an off-chip count rate exceeding $6 \times 10^{4}$ counts per second (cps) (saturation rate > $8.6 \times 10^{4}$ cps). In an unpatterned thin-film sample, we measure antibunching with $g^{(2)}(0) \sim 0.05$ and photon count rates exceeding $8 \times 10^{5}$ cps (saturation rate > $1 \times 10^{6}$ cps). Although spin and detailed optical linewidth measurements are left for future work, these results already show the potential for high-quality QEs monolithically integrated in a wide range of III-nitride device technologies that would enable new quantum device opportunities and industrial scalability.