标题： 门控自旋漩涡和畴壁手性 显示英文标题

标题： Gate-controlled skyrmion and domain wall chirality

摘要： 磁性斯格明子是局部的螺旋自旋结构，它们在纳米尺度上存储和处理信息方面展现出巨大潜力。 在存在非对称交换相互作用的情况下，其手性通常被视为在样品沉积过程中设定的固有参数。 在这项工作中，我们实验表明栅极电压可以控制这个关键参数。 我们通过观察电流诱导运动的方向来探测斯格明子和手性畴壁的手性，并表明栅极电压可以反转它。 这种局部且动态的手性反转是由于界面Dzyaloshinskii-Moriya相互作用符号的反转，我们将其归因于栅极电压下氧的离子迁移。 微磁模拟显示，手性反转是一个连续的转变，在此过程中斯格明子保持不变。 使用2-3伏栅极电压控制手性可用于基于斯格明子的逻辑器件，从而实现新的功能。 显示英文摘要

摘要： Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key parameter. We probe the chirality of skyrmions and chiral domain walls by observing the direction of their current-induced motion and show that a gate voltage can reverse it. This local and dynamical reversal of the chirality is due to a sign inversion of the interfacial Dzyaloshinskii-Moriya interaction that we attribute to ionic migration of oxygen under gate voltage. Micromagnetic simulations show that the chirality reversal is a continuous transformation, in which the skyrmion is conserved. This control of chirality with 2 - 3 V gate voltage can be used for skyrmion-based logic devices, yielding new functionalities.