标题： 锗中的硬超导能隙 显示英文标题

标题： Hard superconducting gap in germanium

摘要： 自旋、超导和拓扑系统的协整正在成为可扩展且高保真度量子信息技术的令人兴奋的途径。 高迁移率平面锗是构建具有自旋量子位的量子处理器的领先半导体，但混合超导体-半导体器件的发展受到阻碍，因为获得没有亚能隙态（硬能隙）的超导能隙已被证明很困难。 在这里，我们通过在高迁移率平面锗和一种锗硅化物母体超导体之间开发低无序、无氧化物的界面来解决这一挑战。 这种超导接触是由金属（Pt）和半导体异质结构（Ge/SiGe）之间的热激活固相反应形成的。 电气特性分析显示约单位透明度的约瑟夫森结，并且重要的是，在量子点接触中表现出硬诱导超导能隙。 此外，我们演示了约瑟夫森结的相位控制，并研究了栅控二维超导体-半导体阵列中的输运行为，以实现可扩展的架构。 这些结果扩展了锗中的量子技术工具箱，并为探索单片超导体-半导体量子电路提供了新途径，以实现可扩展的量子信息处理。 显示英文摘要

摘要： The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for building quantum processors with spin-qubits, but progress with hybrid superconductor-semiconductor devices is hindered because obtaining a superconducting gap free of subgap states (hard gap) has proven difficult. Here we solve this challenge by developing a low-disorder, oxide-free interface between high-mobility planar germanium and a germanosilicide parent superconductor. This superconducting contact is formed by the thermally-activated solid phase reaction between a metal (Pt) and the semiconductor heterostructure (Ge/SiGe). Electrical characterization reveals near-unity transparency in Josephson junctions and, importantly, a hard induced superconducting gap in quantum point contacts. Furthermore, we demonstrate phase control of a Josephson junction and study transport in a gated two-dimensional superconductor-semiconductor array towards scalable architectures. These results expand the quantum technology toolbox in germanium and provide new avenues for exploring monolithic superconductor-semiconductor quantum circuits towards scalable quantum information processing.