标题： 滞回和人工忆阻量子神经元中的自振荡 显示英文标题

标题： Hysteresis and Self-Oscillations in an Artificial Memristive Quantum Neuron

摘要： 我们理论研究了一个包含量子忆阻器的人工神经元电路，在弛豫和相位退相干存在的情况下。 量子元件中的电荷传输是通过电荷通过在两个终端之间穿梭的量子粒子进行隧穿实现的——这一功能类似于经典扩散忆阻器。 我们证明，这种物理原理使得量子器件的电流-电压特性表现出滞回行为。 此外，作为人工神经电路的一部分，量子开关能够产生自持电流振荡。 我们的分析表明，这些自振荡仅在弛豫率适中的量子区域内触发，在纯粹的相干区域或非常高的退相干情况下都无法存在。 我们研究了导致电流自振荡开始的滞回性和不稳定性，并根据电路参数分析了它们的特性。 我们的结果提供了一种通用方法，用于利用量子区域控制滞回性并生成自振荡。 显示英文摘要

摘要： We theoretically study an artificial neuron circuit containing a quantum memristor in the presence of relaxation and dephasing. The charge transport in the quantum element is realized via tunneling of a charge through a quantum particle which shuttles between two terminals -- a functionality reminiscent of classical diffusive memristors. We demonstrate that this physical principle enables hysteretic behavior of the current-voltage characteristics of the quantum device. In addition, being used in artificial neural circuit, the quantum switcher is able to generate self-sustained current oscillations. Our analysis reveals that these self-oscillations are triggered only in quantum regime with a moderate rate of relaxation, and cannot exist either in a purely coherent regime or at a very high decoherence. We investigate the hysteresis and instability leading to the onset of current self-oscillations and analyze their properties depending on the circuit parameters. Our results provide a generic approach to the use of quantum regimes for controlling hysteresis and generating self-oscillations.