标题： 展示单电子灵敏读出（SiSeRO）器件的亚电子噪声性能 显示英文标题

标题： Demonstrating sub-electron noise performance in Single electron Sensitive Readout (SiSeRO) devices

摘要： 单电子灵敏读出（SiSeRO）是一种新颖的片上电荷检测技术，原则上可以提供比传统电荷耦合器件（CCD）读出电路更高的灵敏度和改进的噪声性能。 由麻省理工学院林肯实验室开发的SiSeRO使用一种p-MOSFET晶体管，在晶体管通道下方具有耗尽的背栅区域；当电荷转移到背栅区域时，晶体管电流被调制。 利用我们的第一代SiSeRO设备，我们之前实现了约每电子800 pA的灵敏度，4.5个电子的均方根（RMS）等效噪声电荷（ENC），以及在5.9 keV时半高全宽（FWHM）光谱分辨率为130 eV，在625 K像素/秒的读取速度和250 K的探测器温度下。重要的是，由于电荷信号在SiSeRO读出过程中不受影响，我们还能够实现重复非破坏性读出（RNDR），从而改善了ENC性能。 在本文中，我们展示了利用优化用于RNDR测量的增强测试设置，这些设备具有亚电子噪声灵敏度，该设置具有出色的温度控制、改进的读出电路和先进的数字滤波技术。 我们目前正在制造新的SiSeRO探测器，采用更敏感且优化的RNDR放大器设计，这将有助于在未来成熟SiSeRO技术，并最终引领开发使用每个像素上敏感SiSeRO放大器的有源像素传感器（APS）阵列。 具有亚电子灵敏度和快速读出的有源像素设备为下一代大型天文X射线望远镜提供了令人兴奋的选择，这些望远镜需要快速、低噪声的百万像素成像仪。 显示英文摘要

摘要： Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detection technology that can, in principle, provide significantly greater responsivity and improved noise performance than traditional charge coupled device (CCD) readout circuitry. The SiSeRO, developed by MIT Lincoln Laboratory, uses a p-MOSFET transistor with a depleted back-gate region under the transistor channel; as charge is transferred into the back gate region, the transistor current is modulated. With our first generation SiSeRO devices, we previously achieved a responsivity of around 800 pA per electron, an equivalent noise charge (ENC) of 4.5 electrons root mean square (RMS), and a full width at half maximum (FWHM) spectral resolution of 130 eV at 5.9 keV, at a readout speed of 625 Kpixel/s and for a detector temperature of 250 K. Importantly, since the charge signal remains unaffected by the SiSeRO readout process, we have also been able to implement Repetitive Non-Destructive Readout (RNDR), achieving an improved ENC performance. In this paper, we demonstrate sub-electron noise sensitivity with these devices, utilizing an enhanced test setup optimized for RNDR measurements, with excellent temperature control, improved readout circuitry, and advanced digital filtering techniques. We are currently fabricating new SiSeRO detectors with more sensitive and RNDR-optimized amplifier designs, which will help mature the SiSeRO technology in the future and eventually lead to the pathway to develop active pixel sensor (APS) arrays using sensitive SiSeRO amplifiers on each pixel. Active pixel devices with sub-electron sensitivity and fast readout present an exciting option for next generation, large area astronomical X-ray telescopes requiring fast, low-noise megapixel imagers.