标题： 通过各向异性应变在Kagome反铁磁体中实现可电调控的标量自旋手性 显示英文标题

标题： Imprinting electrically switchable scalar spin chirality by anisotropic strain in a Kagome antiferromagnet

摘要： 对外延薄膜施加应变已被证明是控制材料性能的有效方法，为“按需设计材料”铺平了道路。 在本研究中，我们探讨了这一概念在拓扑Kagome反铁磁体中的应用，这些材料可以表现出一系列奇特的磁态。 其中一种材料Mn$_{3}$Sn具有非共线但共面的反向三角形自旋排列，缺乏标量自旋手性。 通过施加各向异性应变，将Kagome三角形的点群对称性从$C_{3v}$降低到$C_{1}$，并利用外延Mn$_{3}$Sn异质结构中的Dzyaloshinskii-Moriya相互作用，我们实现了锰自旋从Kagome平面的倾斜。 这种新诱导的磁态引入了有限的标量自旋手性，并在动量空间中产生了显著的贝里相位。 因此，在室温下Kagome平面上出现了大的反常霍尔效应，可以通过电荷电流完全控制，从而实现多稳态反铁磁存储状态。 显示英文摘要

摘要： Applying strain to epitaxial thin films has proven to be an effective approach for controlling material properties, paving the way for "materials by design". In this study, we explore this concept in the context of topological Kagome antiferromagnets, which can exhibit a range of exotic magnetic states. One such material, Mn$_{3}$Sn, features a non-collinear yet coplanar inverse triangular spin order that lacks scalar spin chirality. By applying anisotropic strain to reduce the point group symmetry of the Kagome triangles from $C_{3v}$ to $C_{1}$, and utilizing the Dzyaloshinskii-Moriya interaction in epitaxial Mn$_{3}$Sn heterostructures, we achieve a canting of the manganese spins out of the Kagome plane. This newly induced magnetic state introduces a finite scalar spin chirality and results in a significant Berry phase in momentum space. Consequently, a large anomalous Hall effect emerges in the Kagome plane at room temperature, which can be fully controlled by charge current, enabling the realization of multiple-stable antiferromagnetic memory states.